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Toxicology and Safety in III V epitaxy
Nicole Proust
Thales Research & Technology (France) |
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280 Mo |
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1 Mo |
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Quantum Dot Laser
Johann Peter Reithmaier
University of Kassel (Germany) |
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305 Mo |
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7 Mo
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Mirror heating and COD in high-power lasers (Catastrophic Optical Damage )
Jens W. Tomm (*) and Ignacio Esquivias (**)
(*) Max Born Institute (Germany)
(**) Universidad Politécnica de Madrid (Spain) |
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360 Mo |
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2.5 Mo
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Efficiency of diode lasers: Basics and principles of optimisation
G. Erbert
Ferdinand- Braun- Institut (Germany)
High-Power High-Brightness Tapered Diode Lasers and Amplifiers
Ralf Ostendorf
Fraunhofer Institut für Angewandte Festkörperphysik (Germany) |
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330 Mo |
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2 Mo
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The major changes affecting the physical layer of optical networks
Sébastien Bigo
Alcatel-Lucent, Bell Labs (France) |
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170 Mo |
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1 Mo
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By emitter degradation analysis of high-power diode laser bars
Eric Larkins (*) and Jens W. Tomm (**)
(*) University of Nottingham (United Kingdom)
(**) Max Born Institute (Germany) |
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310 Mo |
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3 Mo
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7 Mo
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Raman Amplifiers
Dominique Bayart
Alcatel-Lucent (France) |
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460 Mo |
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1 Mo
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Breaking the diffraction limit: Analysis of diode lasers by near-field optical microscopy
Jens W. Tomm
Max Born Institute (Germany) |
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485 Mo |
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9 Mo
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An overview of large spot size laser structures
Brian Corbett
Tyndall (Ireland) |
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340 Mo |
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1 Mo
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Frequency Doubling and Second Order Nonlinear Optics
Paul Michael Petersen and Ole Bjarlin Jensen
DTU Fotonik, Technical University of Denmark (Denmark) |
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175 Mo |
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0.7 Mo
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3 Mo
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Recent Solutions for Higher-Brightness Laser Sources
Nicolas Michel
Alcatel Thales III-V Lab (France) |
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245 Mo |
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0.7 Mo
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Modelling of External Cavity Laser Diodes
Slawomir Sujecki
University of Nottingham (United Kingdom) |
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519 Mo |
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7.3 Mo
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Fluorescence diagnostic imaging
Stefan Andersson-Engels
Lund University (Sweden) |
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193 Mo |
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6.2 Mo
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