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Partner 18 - Institute of High Pressure Physics "Unipress"
Institute of High Pressure Physics "Unipress" (created in 1972) specializes in the application of high-pressure techniques to various areas of material science. The materials studied include semiconductors, superconductors (HTC materials), metals, ceramics and biological materials.
The research on semiconductors involves optical and transport experiments in gas and in liquid cells (up to 3 GPa) and in diamond anvils (up to 50 GPa). The semiconductor research also includes crystal growth under high pressure.
The "Unipress" team was the first in the world to obtain bulk monocrystals of GaN, which is an important material for optical devices emitting in the blue and for high-temperature electronics. The epitaxial methods developed on GaN substrates (MBE and MOCVD) allowed us to obtain InGaN/GaN lasers (pulsed and cw).

"Unipress" manufactures high-pressure laboratory equipment and is recognized by the high-pressure community all over the world. Our director has been elected the President of AIRAPT (the International Association for Advancement of High Pressure Science and Technology).

Within its history, Unipress has spun off several companies, the last one (TopGaN Ltd founded in 2001) manufactures violet lasers.

Unipress' research has been recognized by the award of two Center of Excellence grants by the European Commission. In addition to these projects, we are engaged in many 5th and 6th Framework EU projects, NATO projects and other international cooperations. We have a "twinning agreement" with Montpellier University in France.

The scientific staff of HPRC Unipress includes 10 Professors and 27 Research Associates and Postdoctoral fellows. We host 14 Ph.D. students.

Our main location is on Sokolowska 29/37, 01-142 Warsaw, but Unipress has another building on Prymasa Tysiaclecia 98 and a villa in the small town of Celestynów (40 km south-east of Warsaw). More information can be found on our webpage
Activities in WWW.BRIGHT-EU

-The Unipress team will develop wavelength tuning of laser diodes using hydrostatic pressure. We shall combine such tuning with external-resonator methods (WP3).

We shall use pressure for characterizing recombination mechanisms in laser diodes. In short wavelength lasers, we shall determine the barriers for leakage, since they are very sensitive to pressure (WP2).

Finally, we shall study laser diode reliability after multiple pressure cycles in WP5. This is important for pressure-tuning methods and for studying strain-induced degradation mechanisms.

For further information, please contact: Prof. Witold Trzeciakowski (, Tel: +4822 8760346
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