World Wide Welfare:
semiconductor las
ER for
Eneric Use
Partner 17 - (FHG)
The Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. (FhG) is a link between science and industry, that is between the research and the application of its results.
It was founded in Munich in 1949 as a non-profit registered association. The Fraunhofer-Gesellschaft is an autonomous organization with a decentralised organisational structure. Whilst the administrative headquarters are in Munich, the legally non-independent research institutes operate from different locations throughout Germany.
The Fraunhofer-Gesellschaft currently maintains 58 research institutes. A staff of approximately 13.000, with the majority being qualified scientists and engineers, work with an annual research budget of about one billion Euro.

Today Fraunhofer-Gesellschaft is the leading organization of institutes of applied research and development in Europe. The employees carry out research and development projects on a contract basis on behalf of industry, the service sector and government.
Future-oriented strategic research commissioned by the government and public authorities are carried out with the aim of promoting innovations in key technologies with an economic and social relevance in the next five to ten years. Working within the framework of the European Union's research and technological development programs, the Fraunhofer-Gesellschaft collaborates in industrial consortia on technical issues ultimately destined to improve the competitiveness of European industry.
Commissioned by customers in industry, Fraunhofer scientists provide rapid, economical and immediately applicable solutions. Work focuses on specific tasks across a wide spectrum of research fields including communications, energy, microelectronics, manufacturing, transport and the environment. When required, several institutes collaborate on an interdisciplinary basis to develop system solutions with a wide range of applications. The clients receive advanced technical know-how and very exclusive services.
Fraunhofer Institute for Laser Technology (ILT)

The Fraunhofer ILT, located in Aachen, is a development and contract research institute in the field of industrial laser technology. The activities cover the development of new laser beam sources and components, laser measurement and analysis technologies, laser-supported manufacturing and processing techniques, lasers in life science and lasers for telecommunication applications. One of the dominating activities is the development of diode laser based beam sources for a variety of applications ranging from industrial materials processing, graphics arts, and medicine to biotechnology and telecommunications.

In the field of high-power diode lasers, ILT is working on the cooling and packaging technology, micro-optics and waveguides, special beam shaping optics, fiber coupling, wavelength multiplexing techniques as well as on module and system development. Further on, ILT is developing mounting and testing equipment for diode lasers and micro-optical elements. Currently, a staff of approximately 230 people is working at ILT, approximately 25 of them in the field of high-power diode lasers. The Institute is certified according to ISO 9001:2000.

Fraunhofer Institute for Applied Solid State Physics (IAF)

The Fraunhofer IAF is a leading research center in the field of III-V compound semiconductors and their applications in micro-, nano- and optoelectronics. The IAF has the complete process technology from epitaxy to mounting and packaging, from the semiconductor wafer to integrated circuits and modules. The core competencies include the design of devices and integrated circuits, III-V epitaxy and technology. The R&D work is in close cooperation with industrial partners. The Institute is certified according to ISO 9001:2000.

In the field of semiconductor lasers, IAF focuses on the development and application of complete semiconductor processes for the manufacturing of optoelectronic semiconductor devices including high-power diode lasers, infrared diode lasers emitting at wavelength > 2 µm, and quantum cascade lasers for even larger wavelengths. Based on the III-V compound semiconductors GaAs, AlGaAs and GaInAs high-power high-brightness diode lasers are realized. Based on new group III-antimonides such as GaSb and AlGaAsSb or in the material system InP novel types of diode lasers are being developed.

Fraunhofer IAF is staffed with approx. 200 scientists including doctoral and diploma students, engineers, technical and administrative support, approximately 25 of them in the field of high-power diode lasers. Research work is performed in laboratories, clean rooms and offices with more than 8000 sqm. of floor space.
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